Altium Designer Pick and Place Locations E:\OneDrive - Food Equipment Technologies Company\CONTROLS\CBS-1100-XV+\Design_20170818\Design\Project Outputs for CBS1100\Pick and place files\Pick Place for CBS2100EE(CBS Production PCB).txt ======================================================================================================================== File Design Information: Date: 29/08/17 Time: 12:05 Revision: 0 Variant: Production Units used: mil Designator Comment Layer Footprint Center-X(mil) Center-Y(mil) Rotation Description CN5 52207-0833 BottomLayer MOLX-52207-0833 1250.000 300.000 180 1.0 mm Pitch Easy-On(TM) Type FPC Connector, 2.7 mm Mated Height, Right Angle, ZIF, SMT, Top Contact, 8 Circuits, -40 to 85 degC, ELV and RoHS Compliant, Tape and Reel U5 LM1117DT-3.3 BottomLayer TD03B_N 1274.787 723.000 360 800mA Low-Dropout Linear Regulator, 3-pin TO-252 U4 M95080-WMN6P BottomLayer SO-G8_E2.9 2090.000 4349.599 360 8 Kbit serial SPI bus EEPROM with high-speed clock U3 ULN2003D BottomLayer SO-G16_C5.2 885.000 1345.000 270 Seven Darlington Array U2 STM32F105RCT6 BottomLayer STM-LQFP64_M 1925.000 2450.000 360 ARM Cortex-M3 32-bit MCU, 256 KB Flash, 64 KB Internal RAM, 51 I/Os, 64-pin LQFP, -40 to 85 degC, Tray U1 STMPS2141STR BottomLayer SOT-23-5 2264.000 1197.000 90 Enhanced single channel power switch 500mA R26 1k 5% 0805(2012) BottomLayer R0805 604.000 772.000 270 1k 0.125W 5% 0805 (2012 Metric) SMD R25 47k 5% 0805(2012) BottomLayer R0805 1918.000 4454.000 270 47k 0.125W 5% 0805 (2012 Metric) SMD R24 10k 5% 0805(2012) BottomLayer R0805 1688.000 3994.000 360 10k 0.125W 5% 0805 (2012 Metric) SMD R23 22R 5% 0805(2012) BottomLayer R0805 1600.000 3679.000 90 22R 0.125W 5% 0805 (2012 Metric) SMD R22 1k5 5% 0805(2012) BottomLayer R0805 1668.000 1077.000 270 1k5 0.125W 5% 0805 (2012 Metric) SMD R21 1k5 5% 0805(2012) BottomLayer R0805 1392.000 1077.000 270 1k5 0.125W 5% 0805 (2012 Metric) SMD R20 390R 5% 0805(2012) BottomLayer R0805 1283.000 3750.000 180 2k7 0.125W 5% 0805 (2012 Metric) SMD R19 10k 5% 0805(2012) BottomLayer R0805 1251.000 988.000 180 10k 0.125W 5% 0805 (2012 Metric) SMD R18 10k 5% 0805(2012) BottomLayer R0805 1809.000 988.000 360 10k 0.125W 5% 0805 (2012 Metric) SMD R16 7k5 5% 0805(2012) BottomLayer R0805 1111.000 3750.000 360 7k5 0.125W 5% 0805 (2012 Metric) SMD R12 33R 5% 2010(5025) BottomLayer R2010 545.000 1192.205 90 33R 0.75W 5% 2010 (5025 Metric) SMD R11 10k 5% 0805(2012) BottomLayer R0805 658.000 2463.000 270 10k 0.125W 5% 0805 (2012 Metric) SMD R10 10k 5% 0805(2012) BottomLayer R0805 730.000 3149.000 270 10k 0.125W 5% 0805 (2012 Metric) SMD R9 470k 1% 0805(2012) BottomLayer R0805 630.000 3849.000 90 470k 0.125W 1% 0805 (2012 Metric) SMD R8 270k 1% 0805(2012) BottomLayer R0805 712.000 4024.000 90 270k 0.125W 1% 0805 (2012 Metric) SMD R7 4k7 1% 0805(2012) BottomLayer R0805 524.000 4270.000 90 4k7 0.125W 1% 0805 (2012 Metric) SMD R6 270k 1% 0805(2012) BottomLayer R0805 816.000 4024.000 270 270k 0.125W 1% 0805 (2012 Metric) SMD R5 4k7 5% 0805(2012) BottomLayer R0805 848.000 4308.000 360 4k7 0.125W 5% 0805 (2012 Metric) SMD R4 100k 1% 0805(2012) BottomLayer R0805 920.000 4024.000 270 100k 0.125W 1% 0805 (2012 Metric) SMD R3 Jumper 0805(2012) BottomLayer R0805 2109.000 397.000 90 Jumper 0805 (2012 Metric) R2 10k 5% 0805(2012) BottomLayer R0805 2172.000 1393.000 360 10k 0.125W 5% 0805 (2012 Metric) SMD R1 47k 5% 0805(2012) BottomLayer R0805 2135.000 1182.000 90 47k 0.125W 5% 0805 (2012 Metric) SMD Q8 PDTC114ET BottomLayer SOT-23 1819.489 1195.869 180 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q7 PDTC114ET BottomLayer SOT-23 1379.511 1428.131 360 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q6 PDTC114ET BottomLayer SOT-23 1515.511 1428.131 360 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q10 PDTC114ET BottomLayer SOT-23 1524.489 3860.869 180 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q5 PDTC114ET BottomLayer SOT-23 1652.511 1428.131 360 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q4 PDTC114ET BottomLayer SOT-23 1789.511 1428.131 360 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q9 IRLML6302 BottomLayer SO-G3_Z3.3 1688.000 3854.000 360 HEXFET Power MOSFET Q3 PDTC114ET BottomLayer SOT-23 1243.511 1428.131 360 NPN resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q2 PDTA114ET BottomLayer SOT-23 1682.511 1248.131 360 PNP resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm Q1 PDTA114ET BottomLayer SOT-23 1377.511 1248.131 360 PNP resistor-equipped transistor, R1=10 kOhm, R2=10 kOhm LED1 LED R BottomLayer LED0805 604.000 597.000 360 RED LED CNLCD1 Connector for ERM1202-1 TopLayer Con_ERM1202-1 1249.998 4083.997 360 Connector 15-pin for LCD Display ERM1202-1 L4 BLM21AG102SN1D BottomLayer L0805 560.000 2605.000 180 BLM21A Series Chip Ferrite Bead, 1000 Ohm at 100 MHz, 0.28 Ohm at DC, 500 mA L3 BLM21AG102SN1D BottomLayer L0805 522.000 3224.000 90 BLM21A Series Chip Ferrite Bead, 1000 Ohm at 100 MHz, 0.28 Ohm at DC, 500 mA L2 BLM21AG102SN1D BottomLayer L0805 525.000 4020.000 90 BLM21A Series Chip Ferrite Bead, 1000 Ohm at 100 MHz, 0.28 Ohm at DC, 500 mA L1 BLM21AG102SN1D BottomLayer L0805 628.000 4444.000 270 BLM21A Series Chip Ferrite Bead, 1000 Ohm at 100 MHz, 0.28 Ohm at DC, 500 mA D1 PESD12VS2UT BottomLayer SOT-23B 2106.000 733.000 360 Double ESD protection diodes in SOT23 package, 12V CN1 NS39-W3P BottomLayer FLY3V 240.000 652.756 270 NS39 Series, 3-Pin, PCB Connector, 3.96mm Pitch CN2 NS39-W4P BottomLayer NS39-W4P 240.000 1355.906 270 NS39 Series, 4-Pin, PCB Connector, 3.96mm Pitch CN7 NS25-W4P BottomLayer WF-04S 1529.000 4918.000 180 NS25 Series, 4-Pin, PCB Mount, 2.54 mm Pitch, Straight CN3 NS39-W5P BottomLayer NS39-W5P-1 240.000 2213.404 270 NS39 Series, 5-Pin, PCB Connector, 3.96mm Pitch CN8 NS25-W4P BottomLayer WF-04S 1000.000 4918.000 180 NS25 Series, 4-Pin, PCB Mount, 2.54 mm Pitch, Straight CN6 2501S-5P BottomLayer 2501S-5P 2322.835 787.402 270 Connector, 1x5-Pin, 2.5 mm Pitch, Straight CN4 70543-0001 BottomLayer 70543-0001 240.000 4355.118 90 Schrouded Header, 2-Pin, Single Row, .120" Pocket Vertical, 2.54mm (.100") Pitch CE2 CAP EL 47uF 16V BottomLayer CE1D2 767.000 506.000 90 CAP EL 47uF 16V ±20% D=6,3mm F=2,5mm H=5mm CE1 CAP EL 470uF 35V BottomLayer CE2D4 890.000 893.000 180 CAP EL 470uF 35V ±20% D=10mm F=5mm H=16mm C27 CAP 100nF 50V 0805(2012) BottomLayer C0805 948.000 549.000 90 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C26 CAP 100nF 50V 0805(2012) BottomLayer C0805 1609.000 692.000 90 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C25 CAP 10uF 6.3V 0805(2012) BottomLayer C0805 1718.000 692.000 90 CAP 10uF 6.3V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C24 CAP 100nF 50V 0805(2012) BottomLayer C0805 1917.000 4277.599 90 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C15 CAP 10uF 6.3V 0805(2012) BottomLayer C0805 938.000 3751.000 180 CAP 10uF 6.3V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C14 CAP 100nF 50V 0805(2012) BottomLayer C0805 938.000 3647.000 180 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C13 CAP 1uF 50V 0805(2012) BottomLayer C0805 1252.000 1227.000 270 CAP 1uF 50V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C9 CAP 100pF 50V 0805(2012) BottomLayer C0805 538.000 2463.000 270 CAP 100pF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C8 CAP 100pF 50V 0805(2012) BottomLayer C0805 626.000 3149.000 270 CAP 100pF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C7 CAP 100pF 50V 0805(2012) BottomLayer C0805 525.000 3849.000 90 CAP 100pF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C6 CAP 4.7uF 50V 0805(2012) BottomLayer C0805 2117.000 999.000 90 CAP 4.7uF 50V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C5 CAP 100pF 50V 0805(2012) BottomLayer C0805 628.000 4270.000 90 CAP 100pF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C4 CAP 100nF 50V 0805(2012) BottomLayer C0805 524.000 4444.000 90 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C3 CAP 100nF 50V 0805(2012) BottomLayer C0805 2348.000 1370.000 360 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C2 CAP 10uF 6.3V 0805(2012) BottomLayer C0805 2348.000 1478.000 360 CAP 10uF 6.3V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C1 CAP 1uF 50V 0805(2012) BottomLayer C0805 767.000 3887.000 360 CAP 1uF 50V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD PCB1 1051.00041.00_0-A.3 BottomLayer PCB_rev -21139.758 -15309.744 270 Blank PCB L5 BLM21AG102SN1D BottomLayer L0805 1662.000 2827.000 90 BLM21A Series Chip Ferrite Bead, 1000 Ohm at 100 MHz, 0.28 Ohm at DC, 500 mA X1 8.000000 MHz HC49 SMD BottomLayer XTAL_SMD 1450.851 2090.863 90 Crystal 8.000000 MHz, HC49 SMD, ±30PPM, CL 20pF R14 390R 5% 0805(2012) BottomLayer R0805 1287.851 2294.863 90 390R 0.125W 5% 0805 (2012 Metric) SMD C11 CAP 20pF 50V 0805(2012) BottomLayer C0805 1287.851 2114.863 90 CAP 20pF 50V ±10% 0805 (2012 Metric) Thickness 1mm SMD C10 CAP 20pF 50V 0805(2012) BottomLayer C0805 1287.851 1893.863 270 CAP 20pF 50V ±10% 0805 (2012 Metric) Thickness 1mm SMD C22 CAP 100nF 50V 0805(2012) BottomLayer C0805 1770.000 2073.000 270 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C21 CAP 100nF 50V 0805(2012) BottomLayer C0805 2200.000 2188.000 270 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C20 CAP 100nF 50V 0805(2012) BottomLayer C0805 2188.000 2716.000 360 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C19 CAP 100nF 50V 0805(2012) BottomLayer C0805 1767.000 2827.000 90 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C17 CAP 10uF 6.3V 0805(2012) BottomLayer C0805 1525.000 2865.000 180 CAP 10uF 6.3V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD C16 CAP 100nF 50V 0805(2012) BottomLayer C0805 1525.000 2758.000 180 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C12 CAP 100nF 50V 0805(2012) BottomLayer C0805 1411.000 2451.000 180 CAP 100nF 50V ±20% 0805 (2012 Metric) Thickness 1mm SMD C18 CAP 10uF 6.3V 0805(2012) BottomLayer C0805 1822.000 1646.000 360 CAP 10uF 6.3V ±20% 0805 (2012 Metric) Thickness 1.45mm SMD CN9 NS39-W2P BottomLayer FLY2V 240.000 3832.047 270 NS39 Series, 2-Pin, PCB Connector, 3.96mm Pitch D2 PMEG6010CEH.115 BottomLayer SOD123_V 510.000 2925.000 270 Schottky Barrier Diode, 60 V, 11 uA, -65 to 150 degC, SOD123F, RoHS D3 PMEG6010CEH.115 BottomLayer SOD123_V 510.000 2150.000 270 Schottky Barrier Diode, 60 V, 11 uA, -65 to 150 degC, SOD123F, RoHS Q11 IRLML0060 BottomLayer SOT-23 635.489 2904.869 180 N-Channel MOSFET, Ultra Low On-Resistance Q12 IRLML0060 BottomLayer SOT-23 628.489 2124.869 180 N-Channel MOSFET, Ultra Low On-Resistance R27 10k 5% 0805(2012) BottomLayer R0805 630.000 2770.000 360 10k 0.125W 5% 0805 (2012 Metric) SMD R28 10k 5% 0805(2012) BottomLayer R0805 619.000 1951.000 90 10k 0.125W 5% 0805 (2012 Metric) SMD CN10 NS39-W5P BottomLayer NS39-W5P-1 240.000 2992.929 270 NS39 Series, 5-Pin, PCB Connector, 3.96mm Pitch